A 10V complementary SiGe BiCMOS foundry process for high-speed and high-voltage analog applications

Author

Tominari, T. ; Miura, M. ; Shimamoto, H. ; Arai, M. ; Yoshida, Y. ; Sato, H. ; Aoki, T. ; Nonami, H. ; Wada, S. ; Hosoe, H. ; Washio, K. ; Hashimoto, T.

Author_Institution

Hitachi, Ltd., Tokyo

fYear

2007

fDate

Sept. 30 2007-Oct. 2 2007

Firstpage

38

Lastpage

41

Abstract

A manufacturable 10V-BV_cc/15GHz-f_r complementary SiGe BiCMOS foundry process was developed for high-performance multi-media applications. A novel SiGe profile with a forward/backward stepped Ge profile and controllable emitter interface layer improved the SiGe PNP´s FOM to 620 GHz ldrV.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC; SiGe; complementary BiCMOS foundry process; controllable emitter interface layer; frequency 15 GHz; high-performance multimedia applications; high-speed analog applications; high-voltage analog applications; voltage 10 V; BiCMOS integrated circuits; Circuit testing; Design optimization; Driver circuits; Fabrication; Foundries; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Voltage; SiGe PNP; complementary SiGe BiCMOS; high breakdown voltage; process integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE

Conference_Location

Boston, MA

ISSN

1088-9299

Print_ISBN

978-1-4244-1019-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2007.4351834

Filename

4351834