Title :
BiCom3HV - A 36V Complementary SiGe Bipolar- and JFET-Technology
Author :
Schwartz, W. ; Yasuda, H. ; Steinmann, Ph ; Boyd, W. ; Meinel, W. ; Hannaman, D. ; Parsons, S.
Author_Institution :
Texas Instrum. Deutschland, Freising
fDate :
Sept. 30 2007-Oct. 2 2007
Abstract :
An oxide isolated complementary SiGe base bipolar technology is presented that incorporates JFETs, poly-and thin-film resistors, capacitors and Schottky Barrier diodes for high-precision, high-voltage, high speed, low-noise analog applications at significantly reduced package size.
Keywords :
Ge-Si alloys; Schottky barriers; bipolar transistors; junction gate field effect transistors; semiconductor materials; thin film resistors; Schottky barrier diodes; bipolar-JFET-technology; capacitors; thin-film resistors; voltage 36 V; Capacitors; Germanium silicon alloys; Isolation technology; JFETs; Packaging; Resistors; Schottky barriers; Schottky diodes; Silicon germanium; Transistors; Analog circuits; Insulated gate FETs; MIM devices; silicon bipolar process technology;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-1019-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2007.4351835
