Title :
Simulation experimental analysis of PZT driver circuit
Author :
Gao, Bo ; Wu, Ge ; Shan, Jiangdong ; Tian, Xiaojian
Author_Institution :
Coll. of Commun. Eng., Jilin Univ., Changchun, China
Abstract :
We simulate a presently proposed PZT (piezoelectric transducer) driver circuit with relatively good dynamic response characteristics using a kind of electronic circuits simulation software - Multisim2001. We study the dynamic response characteristics and the power of this circuit. The simulation results shows that this PZT driver circuit can synchronously and linearly amplify the low voltage of the input dynamic signal such as sinusoidal wave to high voltage required for driving PZT, and the correlation coefficient between the input and output voltage is as high as 0.9934, calculated from the experiment data. Furthermore, we found that the power supplied by the power supply increases from 5.353 Watts to 7.854 Watts as the PZT capacitance increases from 100 nF to 1000 nF. By drawing figures and calculating the correlation coefficient between the power and the PZT capacitance (which is 0.99978), we can see that the power is perfectly direct proportional to the capacitance. To our knowledge it´s the first time to note this correlation between the power and the PZT capacitance. This conclusion is very helpful for practical PZT driver circuits design.
Keywords :
correlation methods; driver circuits; dynamic response; electronic engineering computing; lead compounds; oxygen compounds; piezoelectric transducers; zirconium compounds; Multisim2001; PZT; correlation coefficient; driver circuits design; dynamic response characteristics; electronic circuits simulation software; input dynamic signal; piezoelectric transducer; sinusoidal wave; Capacitance; Correlation; Discharges; Driver circuits; Integrated circuit modeling; Power amplifiers; Power supplies; PZT driver; dynamic response; simulation experimental analysis;
Conference_Titel :
Cloud Computing and Intelligence Systems (CCIS), 2011 IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-61284-203-5
DOI :
10.1109/CCIS.2011.6045132