High frequency characterisation of single InAs nanowire field-effect transistors

We report on a first RF characterisation of single InAs nanowire channel field-effect-transistors. The nanowires with about 30 nm diameter are transferred to a carrier substrate and contacted with a coplanar waveguide pad configuration with a pitch down to 50 mum. Magnesium oxide as well as SiN_x are used as gate dielectric for high performance MISFET type field-effect-transistors. Small signal scattering parameter measurements have been performed on-wafer. The nanowire FET exhibit an ultra-small intrinsic gate-source capacitance C_gs down to a few hundred ato Farad, making a careful de-embedding of the data indispensable. First measurements have shown a maximum stable gain higher than 30 dB at low frequency and a maximum oscillation frequency of 15 GHz.