• DocumentCode
    1814325
  • Title

    Varactorless, tuneable LC-VCO for microwave frequencies in a 0.25 μm SiGe BiCMOS technology

  • Author

    Veenstra, H. ; Heijden, E. V d

  • Author_Institution
    Philips Res., Eindhoven
  • fYear
    2007
  • fDate
    Sept. 30 2007-Oct. 2 2007
  • Firstpage
    54
  • Lastpage
    57
  • Abstract
    Many LC-VCOs use a cross-coupled differential pair as active negative resistance. The cross-coupled differential pair realizes un damping for frequencies up to fcross. An active negative resistance can also be realized based on a capacitively loaded emitter follower. Such a topology enables higher oscillation frequencies, and is therefore more suited for microwave frequencies. Moreover, by realizing the capacitive load from the input capacitance of a second, resistively loaded emitter follower, the negative resistance and output signal buffering functions can be combined. The varactor typically dominates the losses of the LC-tank at microwave frequencies. This paper demonstrates an LC-VCO based on a capacitively loaded emitter follower, with frequency tuning realized via the collector-base capacitance of the first emitter followers connected to the inductor. No additional varactor is required. The oscillator, implemented in a 0.25μm SiGe:C BiCMOS technology, achieves a measured frequency tuning range from 53.2 to 57.6 GHz and a phase noise of -100 dBc/Hzat 1 MHz from the carrier.
  • Keywords
    BiCMOS integrated circuits; circuit tuning; millimetre wave oscillators; silicon; silicon compounds; voltage-controlled oscillators; BiCMOS technology; LC-VCO; SiGe; capacitive loading; cross-coupled differential pair; emitter follower; frequency tuning; microwave frequencies; size 0.25 μm; voltage controlled oscillators; BiCMOS integrated circuits; Capacitance; Damping; Germanium silicon alloys; Microwave frequencies; Microwave technology; Silicon germanium; Topology; Tuning; Varactors; Voltage controlled oscillators; millimeter wave oscillators; negative resistance circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
  • Conference_Location
    Boston, MA
  • ISSN
    1088-9299
  • Print_ISBN
    978-1-4244-1018-7
  • Electronic_ISBN
    1088-9299
  • Type

    conf

  • DOI
    10.1109/BIPOL.2007.4351838
  • Filename
    4351838