Title :
Large Signal Modeling of High Efficiency SiGe HBTs for Power Amplifier Applications
Author :
Malladi, Ramana M. ; McPartlin, Michael ; Joseph, Alvin ; Lafontaine, Hugues ; Doherty, Mark
Author_Institution :
IBM Microelectron., Essex
fDate :
Sept. 30 2007-Oct. 2 2007
Abstract :
Large-signal compact modeling of SiGe HBTs integrated into a new IBM BICMOS technology geared towards high-efficiency power amplifiers is described. The technology exhibits a record 73% PAE at 5.75 GHz in class AB operation. A scalable HiCUM model (high current model) is developed to accurately model the DC, small-signal and large-signal characteristics. Results of DC, fT characteristics, output power, PAE and AM-PM performance of the device are discussed in detail.
Keywords :
BiCMOS integrated circuits; germanium compounds; heterojunction bipolar transistors; microwave power amplifiers; silicon compounds; IBM BICMOS technology; SiGe; class AB operation; frequency 5.75 GHz; heterojunction bipolar transistor; high current model; high efficiency SiGe HBT; large-signal compact modeling; power amplifier application; scalable HiCUM model; BiCMOS integrated circuits; Capacitance; Doping profiles; Germanium silicon alloys; High power amplifiers; Microelectronics; Power amplifiers; Radio frequency; Semiconductor optical amplifiers; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-1019-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2007.4351839
