DocumentCode :
181437
Title :
Process & design impact on BVDSS stability of a shielded gate trench power MOSFET
Author :
Hossain, Zahid ; Burra, Bhavani ; Sellers, James ; Pratt, Brian ; Venkatraman, Prasad ; Loechelt, Gary ; Salih, Ali
Author_Institution :
ON Semicond., Phoenix, AZ, USA
fYear :
2014
fDate :
15-19 June 2014
Firstpage :
378
Lastpage :
381
Abstract :
This paper discusses the breakdown voltage (BVDSS) characteristics of an n-channel charge balanced shielded gate trench power MOSFET. The study emphasizes on elements that affect the BVDSS stability of such devices to gain good control on design and process/device parameters in order to produce a robust product. Breakdown voltage (BVDSS) walk-in or walk-out can be observed when certain process (e.g., epi doping concentration) and design layout (e.g., termination) conditions are not in coherence.
Keywords :
power MOSFET; semiconductor device breakdown; BVDSS stability; breakdown voltage characteristics; design impact; design layout; n-channel charge balanced shielded gate trench power MOSFET; process layout; Doping; Electric fields; Electric potential; Logic gates; MOSFET; Silicon; Space charge;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
ISSN :
1943-653X
Print_ISBN :
978-1-4799-2917-7
Type :
conf
DOI :
10.1109/ISPSD.2014.6856055
Filename :
6856055
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=181437
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