Title :
Improvement of the Transfer Current Modeling in HICUM/L0
Author :
Thiele, C. ; Berkner, J. ; Klein, W.
Author_Institution :
Infineon Technol. AG, Neubiberg
fDate :
Sept. 30 2007-Oct. 2 2007
Abstract :
HICUM/L0 is a bipolar compact model, which was developed to combine the advantage of the sophisticated HICUM/L2 and the simplicity of the well-known SGP-Model. In this paper improved model equations for the description of the forward transfer current in the HICUM/LO model are presented. The improved model equations avoid a negative slope which can occur in the simulated collector current, but they do not need additional model parameters.
Keywords :
bipolar transistors; semiconductor device models; HICUM/LO; bipolar compact model; collector current; forward transfer current; negative slope; transfer current modeling; Bipolar transistors; Circuit simulation; Conductivity; Current density; Equations; Kirk field collapse effect; Semiconductor device modeling; Bipolar transistors; Circuit simulation; Semiconductor device modeling;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-1019-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2007.4351840
