Design criteria for shoot-through elimination in Trench Field Plate Power MOSFET

We studied shoot-through phenomena in buried-source-type Trench Field Plate Power MOSFET. We proposed a new analytical circuit model explaining transient gate and buried-source voltages in this structure under the high dV_DS/dt. The new analytical circuit model was verified by TCAD mixed-mode simulation and experimental results, and it was found that there are two types of shoot-through mechanism, for the first time. One is channel conduction mode caused by the displacement gate current from the buried-source, and the other is dynamic avalanche breakdown induced by buried-source voltage increase. We also showed that the reduction of buried-source interconnection resistance is effective for suppressing both types of shoot-through phenomena. It is demonstrated that DC-DC buck converter efficiency is improved by reducing resistance of the buried-source interconnection.