DocumentCode
1814457
Title
Coherent power combination in multi-element sub-THz RTD oscillators coupled with MIM stub structure
Author
Suzuki, Safumi ; Urayama, Kenta ; Asada, Masahiro
Author_Institution
Interdiscipl. Grad. Sch. of Sci. & Eng., Tokyo Inst. of Technol., Tokyo
fYear
2008
fDate
25-29 May 2008
Firstpage
1
Lastpage
4
Abstract
We observed coherent power combination in 3- and 6-element oscillator array using resonant tunneling diodes coupled through planar circuits in sub-THz range. InGaAs/AlAs resonant tunneling diode oscillators with slot antennas are arranged collinearly on the same InP wafer, and coupled with each other through a metal-insulator-metal stub structure. In 3-element array, a single peak at 293 GHz with the output power of 13 muW was observed due to the mutual injection locking. Because the individual output power of each element is around 2-3 muW at most due to relatively low current density for THz and sub-THz oscillators, the output power of the array is much higher than the sum of the powers of each element, indicating coherent power combining. Experimental results are explained with the theoretical analysis of the effect of multi-element oscillator arrays.
Keywords
III-V semiconductors; MIM structures; aluminium compounds; current density; gallium arsenide; indium compounds; injection locked oscillators; power semiconductor diodes; resonant tunnelling diodes; slot antenna arrays; submillimetre wave oscillators; InGaAs-AlAs; InP; MIM structure; coherent power; current density; frequency 293 GHz; metal-insulator-metal stub structure; multielement oscillator arrays; mutual injection locking; planar circuits; power 13 muW; power 3 muW; resonant tunneling diodes; slot antennas; subTHz RTD oscillators; Coupling circuits; Diodes; Indium gallium arsenide; Indium phosphide; Injection-locked oscillators; Metal-insulator structures; Power generation; RLC circuits; Resonant tunneling devices; Slot antennas; coherent power combining; planar coupling; resonant tunneling diode; terahertz and sub-terahertz oscillator; terahertz device;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location
Versailles
ISSN
1092-8669
Print_ISBN
978-1-4244-2258-6
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2008.4703010
Filename
4703010
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