• DocumentCode
    1814457
  • Title

    Coherent power combination in multi-element sub-THz RTD oscillators coupled with MIM stub structure

  • Author

    Suzuki, Safumi ; Urayama, Kenta ; Asada, Masahiro

  • Author_Institution
    Interdiscipl. Grad. Sch. of Sci. & Eng., Tokyo Inst. of Technol., Tokyo
  • fYear
    2008
  • fDate
    25-29 May 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We observed coherent power combination in 3- and 6-element oscillator array using resonant tunneling diodes coupled through planar circuits in sub-THz range. InGaAs/AlAs resonant tunneling diode oscillators with slot antennas are arranged collinearly on the same InP wafer, and coupled with each other through a metal-insulator-metal stub structure. In 3-element array, a single peak at 293 GHz with the output power of 13 muW was observed due to the mutual injection locking. Because the individual output power of each element is around 2-3 muW at most due to relatively low current density for THz and sub-THz oscillators, the output power of the array is much higher than the sum of the powers of each element, indicating coherent power combining. Experimental results are explained with the theoretical analysis of the effect of multi-element oscillator arrays.
  • Keywords
    III-V semiconductors; MIM structures; aluminium compounds; current density; gallium arsenide; indium compounds; injection locked oscillators; power semiconductor diodes; resonant tunnelling diodes; slot antenna arrays; submillimetre wave oscillators; InGaAs-AlAs; InP; MIM structure; coherent power; current density; frequency 293 GHz; metal-insulator-metal stub structure; multielement oscillator arrays; mutual injection locking; planar circuits; power 13 muW; power 3 muW; resonant tunneling diodes; slot antennas; subTHz RTD oscillators; Coupling circuits; Diodes; Indium gallium arsenide; Indium phosphide; Injection-locked oscillators; Metal-insulator structures; Power generation; RLC circuits; Resonant tunneling devices; Slot antennas; coherent power combining; planar coupling; resonant tunneling diode; terahertz and sub-terahertz oscillator; terahertz device;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
  • Conference_Location
    Versailles
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4244-2258-6
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2008.4703010
  • Filename
    4703010