GaAsSbN/GaAs long wavelength PIN detectors

Author

Chen, Chi-Kuang ; Ma, Ta-Chun ; Lin, Yan-Ting ; Lin, Hao-Hsiung

Author_Institution

Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

We report the fabrication of dilute nitride GaAsSbN/GaAs PIN detector with a cut-off wavelength over 1.5 mum. Effect of thermal annealing on the device characteristics is also presented. We found that the thermal treatment increases the acceptor concentration of the GaAsSbN epilayer. The increment leads to the change of conduction type in undoped and Si-doped GaAsSbN and results in low quantum efficiency for the homojunction p-i-n GaAsSbN detector. A heterojunction n-GaAs/i-GaAsSbN/p-GaAsSbN detector was designed to avoid the problem of type conversion. The quantum efficiency of the heterojunction device can reach to 0.13 at 1.1 mum.

Keywords

annealing; antimony compounds; gallium arsenide; gallium compounds; photodetectors; semiconductor epitaxial layers; semiconductor heterojunctions; silicon; GaAsSbN:Si-GaAs; acceptor concentration; cut-off wavelength; epilayer; heterojunction detector; homojunction p-i-n detector; long wavelength PIN detectors; quantum efficiency; thermal annealing; wavelength 1.1 mum; Annealing; Detectors; Gallium arsenide; Heterojunctions; Lattices; Molecular beam epitaxial growth; Nitrogen; Photovoltaic cells; Plasma temperature; Substrates; GaAsSbN; dilute nitrides; photodetctor;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4703012

Filename

4703012