Injection type GaInAsP/InP/Si DFB lasers directly bonded on SOI substrate

Author

Okumura, Tadashi ; Maruyama, Takeo ; Yonezawa, Hidenori ; Nishiyama, Nobuhiko ; Arai, Shigehisa

Author_Institution

Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Tokyo

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

Injection type DFB lasers directly bonded on an SOI substrate were realized for the first time. A threshold current as low as 104 mA was obtained with a stripe width of 25 mum and a cavity length of 1 mm.

Keywords

III-V semiconductors; distributed feedback lasers; elemental semiconductors; gallium arsenide; indium compounds; integrated optics; photoluminescence; semiconductor heterojunctions; semiconductor lasers; silicon; silicon-on-insulator; vapour phase epitaxial growth; wafer bonding; GaInAsP-InP-Si; I-L characteristics; I-V curve; OMVPE; SOI substrate; cavity length; injection type DFB lasers; photoluminescence; size 1 mm; size 25 mum; stripe width; threshold current; Distributed feedback devices; Indium phosphide; Laser feedback; Optical feedback; Optical waveguides; Semiconductor lasers; Silicon on insulator technology; Substrates; Wafer bonding; Waveguide lasers; Distributed Feedback laser; Photonic Integrated Circuit; Silicon On Insulator; Wafer Bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4703013

Filename

4703013