Abstract :
Notice of Violation of IEEE Publication Principles
"0.155-2.5Gbps SiGe BiCMOS Burst-Mode Laser Driver Using a Digital Implementation of the Automatic Power Control Loop"
by A. Maxim,
in the Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM \´07. IEEE
Sept. 30 2007-Oct. 2 2007 Page(s):119 - 122
After careful and considered review, it has been determined that the above paper is in violation of IEEE\´s Publication Principles.
Specifically, the paper contains information that Adrian Maxim admits had been falsified. In response to an inquiry on this misconduct, Mr. Maxim acknowledged that the following people who have been listed as co-authors on several of his papers are fabricated names and that he is the only author:
C. Turinici D. Smith S. Dupue
Additionally, in papers by Mr. Maxim that have co-authors other than those listed above, it was discovered in some cases that he had not consulted with them while writing the papers, and submitted papers without their knowledge.
Although Mr. Maxim maintains that not all of the data is falsified, IEEE nevertheless cannot assure the integrity of papers posted by him because of his repeated false statements.
Due to the nature of this violation, reasonable effort should be made to remove all past references to the above paper, and to refrain from any future references.A multi-standard laser driver for G-PON/E-PON applications supporting data rates up to 2.5 Gbps was realized in a 0.2 mum SiGe BiCMOS technology. A fast switching bias current generator that handles minimum burst on/off times of 576/96 ns was achieved by building a scaled-down replica signal path. A low supply voltage operation was ensured using differential switches with resistor tail and a common-mode loop that sets the modulation dependent driving voltage swing and tail current values. A digital automatic power control loop was implemented to maintain a constant average optical- power over temperature corners and transmitter lifetime, while allowing long burst-off times. The driver specifications include: 10 to 80 mA modulation current range, 1 to 80 mA bias current range, 155 Mbps to 2.5 Gbps data rate, <40 ps rise and fall times, <17 psnp deterministic jitter, 30 mA current from a 3 to 3.6 V supply and 2.5 times 2.7 mm2 die area.
Keywords :
BiCMOS integrated circuits; driver circuits; germanium compounds; power control; silicon compounds; transceivers; E-PON; G-PON; SiGe; SiGe BiCMOS burst-mode laser driver; automatic power control loop; average optical power over temperature corner; bit rate 0.155 Gbit/s to 2.5 Gbit/s; current 10 mA to 80 mA; driving voltage swing; switching bias current generator; tail current values; transmitter lifetime; BiCMOS integrated circuits; Driver circuits; Germanium silicon alloys; Notice of Violation; Optical transmitters; Power control; Power lasers; Silicon germanium; APC; BiCMOS; SiGe; automatic power control loop; burst-mode; laser driver; passive optical network;