Title :
Analysis of Electrothermal Effects in Bipolar Current Mirrors
Author :
d´Alessandro, V. ; Nanver, L.K. ; Zampardi, P.J. ; Rinaldi, N.
Author_Institution :
Univ. of Naples Federico II, Naples
fDate :
Sept. 30 2007-Oct. 2 2007
Abstract :
An extensive electrothermal analysis of current mirrors fabricated in silicon-on-glass and GaAs bipolar technologies is presented. Experimental results demonstrate that pronounced electrothermal effects may arise, which lead not only to a poor mirroring action, but also to a thermal instability occurrence for the output transistor. A simple relation is derived for predicting the instability onset Circuit and numerical simulations are employed to provide a deep insight into the underlying physics and suggest alternative solutions to counteract the electrothermal feedback.
Keywords :
III-V semiconductors; bipolar transistor circuits; bipolar transistors; current mirrors; gallium arsenide; numerical analysis; bipolar current mirrors; bipolar technologies; electrothermal effects; electrothermal feedback; silicon-on-glass; thermal instability; Analog circuits; Circuit simulation; Circuit testing; Electrothermal effects; Feedback circuits; Gallium arsenide; Heterojunction bipolar transistors; Mirrors; Silicon; Thermal conductivity; Analog circuits; Bipolar Junction Transistor (BJT); Heterojunction Bipolar Transistor (HBT); current mirror; electrothermal simulation; impact ionization; thermal instability;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-1019-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2007.4351852