• DocumentCode
    1814672
  • Title

    Analysis of Electrothermal Effects in Bipolar Current Mirrors

  • Author

    d´Alessandro, V. ; Nanver, L.K. ; Zampardi, P.J. ; Rinaldi, N.

  • Author_Institution
    Univ. of Naples Federico II, Naples
  • fYear
    2007
  • fDate
    Sept. 30 2007-Oct. 2 2007
  • Firstpage
    127
  • Lastpage
    130
  • Abstract
    An extensive electrothermal analysis of current mirrors fabricated in silicon-on-glass and GaAs bipolar technologies is presented. Experimental results demonstrate that pronounced electrothermal effects may arise, which lead not only to a poor mirroring action, but also to a thermal instability occurrence for the output transistor. A simple relation is derived for predicting the instability onset Circuit and numerical simulations are employed to provide a deep insight into the underlying physics and suggest alternative solutions to counteract the electrothermal feedback.
  • Keywords
    III-V semiconductors; bipolar transistor circuits; bipolar transistors; current mirrors; gallium arsenide; numerical analysis; bipolar current mirrors; bipolar technologies; electrothermal effects; electrothermal feedback; silicon-on-glass; thermal instability; Analog circuits; Circuit simulation; Circuit testing; Electrothermal effects; Feedback circuits; Gallium arsenide; Heterojunction bipolar transistors; Mirrors; Silicon; Thermal conductivity; Analog circuits; Bipolar Junction Transistor (BJT); Heterojunction Bipolar Transistor (HBT); current mirror; electrothermal simulation; impact ionization; thermal instability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
  • Conference_Location
    Boston, MA
  • ISSN
    1088-9299
  • Print_ISBN
    978-1-4244-1019-4
  • Electronic_ISBN
    1088-9299
  • Type

    conf

  • DOI
    10.1109/BIPOL.2007.4351852
  • Filename
    4351852