Title :
Surface Fermi level in GaAsSb alloys grown by MBE on Inp substrates
Author :
Chouaib, Houssam ; Rudno-Rudzinski, Wojciech ; Apostoluk, Aleksandra ; Bru-Chevallier, Catherine ; Lijadi, Melania ; Bove, Philippe
Author_Institution :
KLA-Tencor Corp., San Jose, CA
Abstract :
We use photoreflectance spectroscopy to investigate the Fermi level pinning at the surface of GaAsSb. The measurements have been performed on five GaAsSb/Inp UN+ structures. The surface Fermi level is determined versus the Sb concentration.
Keywords :
Fermi level; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; photoreflectance; semiconductor epitaxial layers; semiconductor heterojunctions; valence bands; GaAsSb-InP; MBE; UN+ structures; epitaxial structures; molecular beam epitaxy; photoreflectance spectroscopy; surface Fermi level pinning; surface depletion layer; valence band edge; Indium phosphide; GaAsSb; Photoreflectance; Surface Fermi level;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4703020
