DocumentCode :
181474
Title :
6-in-1 Silicon carbide power module for high performance of power electronics systems
Author :
Ishino, H. ; Watanabe, Toshio ; Sugiura, Komei ; Tsuruta, K.
Author_Institution :
Res. Labs., DENSO Corp., Nisshin, Japan
fYear :
2014
fDate :
15-19 June 2014
Firstpage :
446
Lastpage :
449
Abstract :
The excellent characteristics (low power loss, high speed/high temperature operation) of SiC semiconductors can contribute to realizing smaller power converter with a higher power output. Using our own packaging technology of double-sided cooling and SiC devices, we have developed the new, small 6-in-1 power module with high output power density. If the inductance of the main circuit is large, it will cause a large surge voltage when switched. Therefore, we have incorporated the optimum low inductance structure into this module, and have made it possible to drive the SiC device at high speed. Using this module, we have built a prototype of inverter unit with 75 kW output power, and have achieved an efficiency of 99% and a power density of 100 kW/L.
Keywords :
cooling; electronics packaging; modules; power convertors; silicon compounds; wide band gap semiconductors; 6-in-1 power module; SiC; double-sided cooling device; efficiency 99 percent; inverter; packaging technology; power 75 kW; power converter; power electronics system; Cooling; Heating; Inductance; Inverters; Multichip modules; Silicon; Silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
ISSN :
1943-653X
Print_ISBN :
978-1-4799-2917-7
Type :
conf
DOI :
10.1109/ISPSD.2014.6856072
Filename :
6856072
Link To Document :
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