Title :
Performance comparison of InP and AlGaN/GaN Schottky diode hydrogen sensors
Author :
Akazawa, Masamichi ; Hasegawa, Hideki
Author_Institution :
Res. Center for Integrated Quantum Electron., Hokkaido Univ., Sapporo
Abstract :
Performances of InP-based and AlGaN-based Schottky diode hydrogen sensors with low-leakage currents were compared for understanding of the underlying sensing mechanism and for the purpose of material selection. The result indicated applicability of the interface dipole mechanism for sensing, higher sensitivity of InP sensor at room temperature and superiority of the AlGaN sensor at higher temperatures.
Keywords :
III-V semiconductors; Schottky diodes; aluminium compounds; gallium compounds; gas sensors; hydrogen; indium compounds; leakage currents; wide band gap semiconductors; AlGaN-GaN; InP; Schottky diode hydrogen sensors; gas sensor; interface dipole mechanism; low-leakage currents; sensing mechanism; temperature 293 K to 298 K; Aluminum gallium nitride; Gallium nitride; Hydrogen; Indium phosphide; Leakage current; Schottky barriers; Schottky diodes; Semiconductor diodes; Temperature sensors; Wireless sensor networks; AlGaN; In; Schottky diod; hydrogen sensor;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4703024
