Title :
Devices-drivers and protection
Author_Institution :
Dynamic Syst. Ltd., Royston, UK
Abstract :
Once a step is made to a medium power range of several hundred volts and amps the power device parasitic characteristics begin to dominate design, and the ability to scale up power devices begins to falter. Many applications prefer to advance power requirements by parallel units rather than make a technology jump. Good applications for medium power devices are often missed. This paper concentrates on the interaction between system performance, and the design of the power conversion stage, and to show the inter-dependence of switch drivers and switch snubbers. The author concludes with one example of optimisation of power conversion for both a bipolar junction transistor (BIT) and gate turn-off thyristor (GTO), the emitter and cathode switch
Keywords :
bipolar transistors; overvoltage protection; power electronics; power transistors; thyristors; GTO; bipolar junction transistor; device protection; gate turn-off thyristor; inter-dependence; medium power devices; medium power range; optimisation; parallel units; parasitic characteristics; power conversion stage; switch drivers; switch snubbers; system performance; technology jump;
Conference_Titel :
New Developments in Power Semiconductor Devices, IEE Colloquium on
Conference_Location :
London