• DocumentCode
    1814810
  • Title

    Devices-drivers and protection

  • Author

    Good, J.K.

  • Author_Institution
    Dynamic Syst. Ltd., Royston, UK
  • fYear
    1991
  • fDate
    33359
  • Firstpage
    42491
  • Lastpage
    42495
  • Abstract
    Once a step is made to a medium power range of several hundred volts and amps the power device parasitic characteristics begin to dominate design, and the ability to scale up power devices begins to falter. Many applications prefer to advance power requirements by parallel units rather than make a technology jump. Good applications for medium power devices are often missed. This paper concentrates on the interaction between system performance, and the design of the power conversion stage, and to show the inter-dependence of switch drivers and switch snubbers. The author concludes with one example of optimisation of power conversion for both a bipolar junction transistor (BIT) and gate turn-off thyristor (GTO), the emitter and cathode switch
  • Keywords
    bipolar transistors; overvoltage protection; power electronics; power transistors; thyristors; GTO; bipolar junction transistor; device protection; gate turn-off thyristor; inter-dependence; medium power devices; medium power range; optimisation; parallel units; parasitic characteristics; power conversion stage; switch drivers; switch snubbers; system performance; technology jump;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    New Developments in Power Semiconductor Devices, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    286017