New diodes for high frequency power supplies

Author

Bernoux, Pierre ; Aloisi, P.

Author_Institution

Motorola Semicond., Toulouse, France

fYear

1991

fDate

33359

Firstpage

42461

Lastpage

42468

Abstract

Developments in high frequency switching power supplies will follow three main axis: 3.3 volt output voltage for ULSI signal and processing ICs, high efficiency in terms of Watt/unit of volume, and virtually `noiseless switchers. Rectifier technology holds the most promising potential toward addressing those objectives: major portions of losses in today SMPS are in the output and snubber rectifiers, most of EMI and switching noise to the network are due to high voltage diodes. This paper will present some of the latest developments in p-n epitaxial and Schottky barrier rectifier technologies which address the main issues and provide guidelines for selecting rectifiers in future high frequency applications

Keywords

Schottky-barrier diodes; p-n junctions; semiconductor technology; solid-state rectifiers; switched mode power supplies; 3.3 V; EMI; SMPS; Schottky barrier rectifier technologies; developments; efficiency; guidelines; high frequency power supplies; high voltage diodes; losses; noiseless switchers; output rectifiers; output voltage; p-n epitaxial junction technology; rectifier technology; snubber rectifiers; switching noise; switching power supplies;

fLanguage

English

Publisher

iet

Conference_Titel

New Developments in Power Semiconductor Devices, IEE Colloquium on

Conference_Location

London

Type

conf

Filename

286018