Title :
New diodes for high frequency power supplies
Author :
Bernoux, Pierre ; Aloisi, P.
Author_Institution :
Motorola Semicond., Toulouse, France
Abstract :
Developments in high frequency switching power supplies will follow three main axis: 3.3 volt output voltage for ULSI signal and processing ICs, high efficiency in terms of Watt/unit of volume, and virtually `noiseless switchers. Rectifier technology holds the most promising potential toward addressing those objectives: major portions of losses in today SMPS are in the output and snubber rectifiers, most of EMI and switching noise to the network are due to high voltage diodes. This paper will present some of the latest developments in p-n epitaxial and Schottky barrier rectifier technologies which address the main issues and provide guidelines for selecting rectifiers in future high frequency applications
Keywords :
Schottky-barrier diodes; p-n junctions; semiconductor technology; solid-state rectifiers; switched mode power supplies; 3.3 V; EMI; SMPS; Schottky barrier rectifier technologies; developments; efficiency; guidelines; high frequency power supplies; high voltage diodes; losses; noiseless switchers; output rectifiers; output voltage; p-n epitaxial junction technology; rectifier technology; snubber rectifiers; switching noise; switching power supplies;
Conference_Titel :
New Developments in Power Semiconductor Devices, IEE Colloquium on
Conference_Location :
London
