• DocumentCode
    1814834
  • Title

    Photoluminescence kinetics and dynamics in semiconductor nanocrystals

  • Author

    Nesbit, D.

  • Author_Institution
    JILA, NIST, USA
  • fYear
    2001
  • fDate
    11-11 May 2001
  • Firstpage
    2
  • Lastpage
    3
  • Abstract
    Summary form only given. Single molecule confocal microscopy has been used to investigate the detailed kinetics of fluorescence intermittency in colloidal II-VI (CdSe) semiconductor quantum dots. Two distinct modes of behavior are observed corresponding to (i) sustained "on" episodes (/spl square//sub on/) of rapid laser absorption/fluorescence cycling, followed by (ii) sustained "off" episodes (/spl square//sub off/) where essentially no light is emitted despite continuous laser excitation. Both the on-time and off-time probability densities follow an inverse power law, P(/spl square//sub on/off/) /spl square/ 1//spl square//sub on/off//sup m/, over more than seven decades in probability density and five decades in time. Such inverse power law behavior is an unambiguous signature of highly distributed rates (over 10/sup 5/-fold) as opposed to isolated rate processes between sparse "on" and "off" configurations of the system. The large dynamic range of the current data also permits several models of fluorescence intermittency to be critically evaluated. The inverse power law in P(/spl square//sub on/) excludes any model based on a static configuration of trap sites, and the results highlight the crucial role of fluctuations in the QD environment. Finally, we offer a simple model based on the dynamic tunneling of carriers through fluctuating barriers, which suggests an alternate way to characterize blinking kinetics.
  • Keywords
    II-VI semiconductors; cadmium compounds; electron traps; fluctuations; hole traps; light absorption; nanostructured materials; optical microscopy; optical pumping; photoluminescence; semiconductor quantum dots; tunnelling; CdSe; QD environment; blinking kinetics; colloidal II-VI CdSe semiconductor quantum dots; configuration; continuous laser excitation; dynamic carrier tunneling; dynamic range; fluctuating barriers; fluctuations; fluorescence intermittency; inverse power law; off-time probability densities; on-time probability densities; photoluminescence dynamics; photoluminescence kinetics; power law behavior; rapid laser absorption/fluorescence cycling; semiconductor nanocrystals; single molecule confocal microscopy; static trap site; sustained off episodes; sustained on episodes; Absorption; Fluorescence; Kinetic theory; Laser modes; Microscopy; Nanocrystals; Photoluminescence; Power system modeling; Quantum dot lasers; Semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 2001. QELS '01. Technical Digest. Summaries of Papers Presented at the
  • Conference_Location
    Baltimore, MD, USA
  • Print_ISBN
    1-55752-663-X
  • Type

    conf

  • DOI
    10.1109/QELS.2001.961769
  • Filename
    961769