High accuracy temperature bipolar modeling for demanding Bandgap application

Author

Pourchon, F. ; Beckrich-Ros, H. ; Raya, C. ; Faure, C. ; Gautheron, B. ; Blanc, J.P. ; Reynard, B. ; Celi, D.

Author_Institution

STMicroelectron., Crolles

fYear

2007

fDate

Sept. 30 2007-Oct. 2 2007

Firstpage

180

Lastpage

183

Abstract

V_DD reduction in advanced CMOS IC´s push for reduced temperature stability spread of bipolar based BGR. To achieve this goal, a reliable extraction methodology for I_C temperature coefficient is detailed. Based on corner lot measurements, a worst-case bipolar model is built. Bandgap circuit measurements are finally compared to statistical simulations.

Keywords

CMOS analogue integrated circuits; bipolar analogue integrated circuits; integrated circuit measurement; integrated circuit modelling; CMOS IC; bandgap circuit measurements; bandgap reference circuit; bipolar-based BGR; corner lot measurements; temperature bipolar modeling; temperature coefficient; temperature stability; CMOS integrated circuits; CMOS technology; Circuit simulation; Circuit stability; Current measurement; Photonic band gap; Reactive power; Semiconductor device modeling; Temperature dependence; Voltage; Bandgap reference circuit; bipolar modeling; substrate PNP; temperature coefficient;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE

Conference_Location

Boston, MA

ISSN

1088-9299

Print_ISBN

978-1-4244-1019-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2007.4351864

Filename

4351864