Single-mode continuous wave operation of electrically pumped 2.25 μm GaSb-based VCSEL

Author

Bachmann, A. ; Kashani-Shirazi, K. ; Lim, T. ; Dier, O. ; Lauer, C. ; Amann, M.-C.

Author_Institution

Walter Schottky Inst., Tech. Univ. Munchen, Garching

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

3

Abstract

We present a continuous wave, electrically pumped, GaSb-based vertical-cavity surface-emitting laser (VCSEL) for trace-gas sensing applications with a room-temperature emission wavelength of 2.25 mum. For current confinement, a structured buried tunnel junction (BTJ) is used. Low threshold currents of 1.7 mA, single mode operation and a tunability by current of 0.87 nm/mA have been achieved.

Keywords

III-V semiconductors; gallium compounds; gas sensors; laser tuning; surface emitting lasers; GaSb; current 1.7 mA; current confinement; emission wavelength; room temperature; single-mode continuous wave operation; structured buried tunnel junction; temperature 293 K to 298 K; threshold currents; trace-gas sensing; tunability; vertical-cavity surface-emitting laser; wavelength 2.25 mum; Absorption; Distributed Bragg reflectors; Gas lasers; Laser excitation; Laser modes; Pump lasers; Surface emitting lasers; Threshold current; Tunable circuits and devices; Vertical cavity surface emitting lasers; GaSb; TDLAS; VCSEL; buried tunnel junction; electrically pumped; mid-infrared; single mode;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4703030

Filename

4703030