Title :
Improved breakdown voltages for type I InP/InGaAs DHBTs
Author :
Lind, Erik ; Griffith, Zach ; Rodwell, Mark J.W.
Author_Institution :
Solid State Phys., Lund Univ., Lund
Abstract :
We have investigated the base-collector breakdown voltage of type I InGaAs/InP DHBTs, which is shown to be dominated by band-to-band tunneling in the base-collector grade. By optimizing the grade we obtain a 20% increase in the breakdown voltage compared with traditional grades.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device breakdown; semiconductor heterojunctions; tunnelling; InP-InGaAs; band-band tunneling; base-collector grade; breakdown voltages; double heterostructure bipolar transistors; traditional grades; type I DHBTs; Double heterojunction bipolar transistors; Effective mass; Frequency; Impact ionization; Indium gallium arsenide; Indium phosphide; Photonic band gap; Physics; Solid state circuits; Tunneling; InP heterojunction bipolar transistor;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4703033
