Title :
Three level masking for improved aspect ratio InP-based photonic crystals
Author :
Karouta, F. ; Docter, B. ; Geluk, E.J. ; Smit, M.K. ; Kaspar, P.
Author_Institution :
Dept. of Electr. Eng., Tech. Univ. Eindhoven, Eindhoven
Abstract :
A three-level masking technique is used to improve the aspect ratio of InP-based photonic crystals. The masking consists of a ZEP/Cr/SiOx stack where the ZEP layer is used to open the Cr which on its turn is a good mask for opening the 500 nm thick SiOx layer. Subsequently InP is etched in an ICP process using Cl2:O2. Very high aspect ratios could be achieved in holes ranging from 130 up to 270 nm in diameter. A maximum aspect ratio of >20 is obtained with the narrowest holes having diameters of 180 and 130 nm.
Keywords :
III-V semiconductors; etching; indium compounds; photonic crystals; ICP process; InP; ZEP layer; aspect ratio; etching; photonic crystals; radius 65 nm; radius 90 nm; size 500 nm; three level masking; Chromium; Circuits; Etching; Indium phosphide; Laboratories; Lattices; Lithography; Optical losses; Photonic crystals; Plasma applications; Cl2-O2; ICP etching; InP; aspect ratio; photonic crystals;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4703034
