• DocumentCode
    1815101
  • Title

    Integration of a 5.5V BVCEO SiGe HBT within a 200 GHz SiGe BiCMOS process flow

  • Author

    Preisler, E.J. ; Matine, N. ; Zheng, J. ; Cheskis, D. ; Hurwitz, P. ; Racanelli, M.

  • Author_Institution
    Jazz Semicond., Newport Beach
  • fYear
    2007
  • fDate
    Sept. 30 2007-Oct. 2 2007
  • Firstpage
    202
  • Lastpage
    205
  • Abstract
    A novel BiCMOS integration scheme is described whereby high-performance, high breakdown-voltage SiGe HBTs can be integrated alongside ultra high performance, 200 GHz SiGe HBTs. The integration scheme is summarized and proof-of-concept data is shown to indicate the validity of the proposed scheme. It is shown that a 5.5 V BVCEO HBT with peak FT of 45 GHz can be manufactured on the same wafer as a 200 GHz HBT with zero or one additional masking layers.
  • Keywords
    BiCMOS integrated circuits; germanium compounds; heterojunction bipolar transistors; silicon compounds; SiGe; SiGe BiCMOS process flow; SiGe HBT; frequency 200 GHz; frequency 45 GHz; masking layers; BiCMOS integrated circuits; Costs; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Manufacturing processes; Silicon germanium; USA Councils; Voltage; Silicon bipolar/BiCMOS process technology; power devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
  • Conference_Location
    Boston, MA
  • ISSN
    1088-9299
  • Print_ISBN
    978-1-4244-1019-4
  • Electronic_ISBN
    1088-9299
  • Type

    conf

  • DOI
    10.1109/BIPOL.2007.4351869
  • Filename
    4351869
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1815101