Title :
Integration of a 5.5V BVCEO SiGe HBT within a 200 GHz SiGe BiCMOS process flow
Author :
Preisler, E.J. ; Matine, N. ; Zheng, J. ; Cheskis, D. ; Hurwitz, P. ; Racanelli, M.
Author_Institution :
Jazz Semicond., Newport Beach
fDate :
Sept. 30 2007-Oct. 2 2007
Abstract :
A novel BiCMOS integration scheme is described whereby high-performance, high breakdown-voltage SiGe HBTs can be integrated alongside ultra high performance, 200 GHz SiGe HBTs. The integration scheme is summarized and proof-of-concept data is shown to indicate the validity of the proposed scheme. It is shown that a 5.5 V BVCEO HBT with peak FT of 45 GHz can be manufactured on the same wafer as a 200 GHz HBT with zero or one additional masking layers.
Keywords :
BiCMOS integrated circuits; germanium compounds; heterojunction bipolar transistors; silicon compounds; SiGe; SiGe BiCMOS process flow; SiGe HBT; frequency 200 GHz; frequency 45 GHz; masking layers; BiCMOS integrated circuits; Costs; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Manufacturing processes; Silicon germanium; USA Councils; Voltage; Silicon bipolar/BiCMOS process technology; power devices;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-1019-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2007.4351869
