Title :
Effect of self and cross-coupling capacitance on stability diagram in a metallic double-dot device
Author :
Sui, Bingcai ; Fang, Liang ; Chi, Yaqing
Author_Institution :
Nat. Lab. of Parallel & Distrib. Process., Nat. Univ. of Defense Technol., Changsha, China
Abstract :
We investigate the effect of self and cross-coupling capacitance on stability diagram in a metallic double-dot device by theory and method. In linear transport regime, cross-coupling capacitances affect the dimension of the honeycomb cell and the distance of two triple points, while self capacitances only slightly broaden the boundary of the cell and make two triple point closer. In nonlinear transport regime, cross-coupling capacitances stretch the current region and charge region in the mid-line direction, while self capacitances extend the region of current regions but not change the shape of the stability cells. Cross-coupling capacitances make stronger impact on the dimensions of stability diagram than self capacitance. But the self-capacitance must be included in the current calculation if its value can not be neglected with respect to the device parameters.
Keywords :
capacitance; electric current; single electron devices; transport processes; cross coupling capacitance; cross-coupling capacitance; current calculation; honeycomb cell; linear transport regime; metallic double dot device; nonlinear transport; self-coupling capacitance; stability diagram; triple point; Couplings; Junctions; Quantum capacitance; Shape; Stability analysis; Tunneling;
Conference_Titel :
Nanoscience and Nanotechnology (ICONN), 2010 International Conference on
Conference_Location :
Sydney, NSW
Print_ISBN :
978-1-4244-5261-3
Electronic_ISBN :
978-1-4244-5262-0
DOI :
10.1109/ICONN.2010.6045167