Design of a 70 GHz Power Amplifier using a Digital InP HBT Process

Author

O´Sullivan, Tomás ; Minh Le ; Partyka, Paul ; Milano, Ray ; Asbeck, Peter M.

Author_Institution

Univ. of California at San Diego, La Jolla

fYear

2007

fDate

Sept. 30 2007-Oct. 2 2007

Firstpage

214

Lastpage

217

Abstract

A +15.1 dBm power amplifier (PA) operating at 70 GHz designed in a high speed digital InP HBT process is presented. The extraction of device models for the HBT´s used in the PA design is discussed along with an electromagnetic simulation accounting for layout parasitics in the power cells. The design employs single-stage cascode amplifier topology in a finite ground CPW transmission line environment. The amplifier demonstrates the possibilities of utilising high speed digital InP HBT processes in the design of high frequency power amplifiers.

Keywords

III-V semiconductors; coplanar transmission lines; coplanar waveguides; heterojunction bipolar transistors; millimetre wave bipolar transistors; millimetre wave power amplifiers; millimetre wave power transistors; network synthesis; network topology; power bipolar transistors; digital HBT process; electromagnetic simulation; finite ground CPW transmission line; power amplifier; power cells; single-stage cascode amplifier topology; Coplanar waveguides; Electromagnetic devices; Electromagnetic modeling; Heterojunction bipolar transistors; High power amplifiers; Indium phosphide; Power amplifiers; Power transmission lines; Process design; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE

Conference_Location

Boston, MA

ISSN

1088-9299

Print_ISBN

978-1-4244-1019-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2007.4351872

Filename

4351872