DocumentCode :
1815189
Title :
InP double heterojunction bipolar transistor technology for 311 GHz oscillator and 255 GHz amplifier
Author :
Scott, Dennis W. ; Sawdai, Donald ; Radisic, Vesna ; Monier, Cedric ; Dang, Linh ; Li, Danny ; Deal, William R. ; Lai, Richard ; Gutierrez-Aitken, Augusto
Author_Institution :
Northrop Grumman Space Technol., Redondo Beach, CA
fYear :
2008
fDate :
25-29 May 2008
Firstpage :
1
Lastpage :
4
Abstract :
Submicron InP double heterojunction bipolar transistors (DHBTs) have been designed for increased fmax. These devices have been used to demonstrate single-stage amplifiers at 255 GHz and fundamental oscillators operating at 311 GHz.
Keywords :
III-V semiconductors; MMIC amplifiers; heterojunction bipolar transistors; indium compounds; oscillators; DHBT; InP; MMIC amplifiers; double heterojunction bipolar transistor technology; frequency 255 GHz; frequency 311 GHz; oscillators; Double heterojunction bipolar transistors; Etching; Frequency; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit interconnections; MMICs; Microwave oscillators; Space technology; Submillimeter wave technology; HBT; amplifier; millimeter wave; monolithic microwave integrated circuit (MMIC); oscillator; sub-millimeter wave;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
ISSN :
1092-8669
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2008.4703035
Filename :
4703035
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1815189
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