InP double heterojunction bipolar transistor technology for 311 GHz oscillator and 255 GHz amplifier

Author

Scott, Dennis W. ; Sawdai, Donald ; Radisic, Vesna ; Monier, Cedric ; Dang, Linh ; Li, Danny ; Deal, William R. ; Lai, Richard ; Gutierrez-Aitken, Augusto

Author_Institution

Northrop Grumman Space Technol., Redondo Beach, CA

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

Submicron InP double heterojunction bipolar transistors (DHBTs) have been designed for increased f_max. These devices have been used to demonstrate single-stage amplifiers at 255 GHz and fundamental oscillators operating at 311 GHz.

Keywords

III-V semiconductors; MMIC amplifiers; heterojunction bipolar transistors; indium compounds; oscillators; DHBT; InP; MMIC amplifiers; double heterojunction bipolar transistor technology; frequency 255 GHz; frequency 311 GHz; oscillators; Double heterojunction bipolar transistors; Etching; Frequency; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit interconnections; MMICs; Microwave oscillators; Space technology; Submillimeter wave technology; HBT; amplifier; millimeter wave; monolithic microwave integrated circuit (MMIC); oscillator; sub-millimeter wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4703035

Filename

4703035