Title :
Phototransistors based on InP/GaAsSb/InGaAs type-II heterostructures
Author :
Ahn, H.S. ; Park, M.S. ; Jang, J.H.
Author_Institution :
Dept. of Inf. & Commun., Gwangju Inst. of Sci. & Technol., Gwangju
Abstract :
Phototransistors based on InP/GaAsSb/InGaAs heterostructures were fabricated and characterized. The fabricated devices with 50-mum diameter exhibited very high optical gain of 154 as well as very low dark current of 17.5 nA, which are promising for highly sensitive photodetection at 1.55 mum optical wavelength.
Keywords :
III-V semiconductors; dark conductivity; gallium arsenide; gallium compounds; indium compounds; photodetectors; phototransistors; semiconductor heterojunctions; InP-GaAsSb-InGaAs; current 17.5 nA; dark current; heterostructures; optical gain; optical wavelength; photodetection; phototransistors; wavelength 1.55 mum; Charge carrier processes; Doping; Indium gallium arsenide; Indium phosphide; Optical devices; Optical sensors; Photodetectors; Phototransistors; Spontaneous emission; Voltage; GaAsSb; photodetection; phototransistors; type-II heterostructures;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4703037
