Assessing the High-Temperature Capabilities of SiGe HBTs Fabricated on CMOS-compatible Thin-film SOI

We quantitatively assess, for the first time, the capabilities of SiGe HBTs fabricated on thin-film SOI for emerging high-temperature circuit applications. The dc and ac performance of both fully-depleted and partially-depleted SiGe HBTs-on-SOI are measured up to a temperature of 330degC (for dc) and 200degC (for ac). Gummel characteristics, current gain, and output characteristics are reported. M-l is used to investigate how collector doping affects the device behavior at high temperatures. We demonstrate that despite the harsh conditions imposed by high-temperature operation, SiGe HBTs-on-SOI maintain adequate performance for many applications for temperatures in the 200-300degC range.