DocumentCode :
1815283
Title :
1550nm AlGaInAs DFB laser with over 20 GHz electro-optical bandwidth and below −150 dB/Hz RIN and receptor for Ku band analog microwave links
Author :
Burie, J.-R. ; Glastre, G. ; Starck, C. ; Beuchet, G. ; Ragot, L. ; Fabre, S. ; Mimoun, M. ; Thebault, M. ; Ligat, B. ; Ratel, P. ; Minot, M. ; Loon, M. ; Fié, J. -P ; Laruelle, F. ; van Dijk, F. ; Decobert, J. ; Parillaud, O. ; Enard, A. ; Achouche, M. ;
Author_Institution :
3S Photonics, Nozay
fYear :
2008
fDate :
25-29 May 2008
Firstpage :
1
Lastpage :
2
Abstract :
1550 nm AlGaInAs DFB lasers and PIN receptors were developed for analog transmission up to 20 GHz. Over 20 GHz bandwidth are measured for both laser and detector. Highly linear characteristics and low RIN < -150 dB/Hz have been obtained for lasers.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; electro-optical effects; gallium arsenide; gallium compounds; semiconductor lasers; AlGaInAs; DFB laser; PIN receptors; electro-optical bandwidth; wavelength 1550 nm; Bandwidth; Laser modes; Lasers and electrooptics; Masers; Optical materials; Optical sensors; Power generation; Power lasers; Temperature; Waveguide lasers; 1550nm; 20GHz; DFB lasers; PIN receptor; analog transmission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
ISSN :
1092-8669
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2008.4703039
Filename :
4703039
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1815283
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