• DocumentCode
    1815389
  • Title

    Current gain enhancement in GaAsSb/InP - DHBT type grown by MBE with a graded composition AlInP emitter

  • Author

    Zaknoune, M. ; Colder, H. ; Yarekha, D.A. ; Dambrine, G. ; Mollot, F.

  • Author_Institution
    Inst. d´´Electron., Microelectron. et de Nanotechnol., Villeneuve d´´Ascq
  • fYear
    2008
  • fDate
    25-29 May 2008
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    AlxIn1-XP/GaAs0.51Sb0.49 DHBTs with various aluminum contents have been grown by MBE. This was motivated by the poor current gain of the InP/GaAsSb structure. From x = 0.00 to 0.30 the best result is obtained with x = 0.25 with a current gain around 6 times higher.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; AlInP-GaAsSb; DHBT; MBE growth; current gain enhancement; double heterojunction bipolar transistors; graded composition emitter; Aluminum; Electron traps; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; MOCVD; Molecular beam epitaxial growth; Radiative recombination; Solids; Spontaneous emission; AlInP emitter; DHBT; GaAsSb/InP; MBE;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
  • Conference_Location
    Versailles
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4244-2258-6
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2008.4703041
  • Filename
    4703041
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1815389