DocumentCode :
1815389
Title :
Current gain enhancement in GaAsSb/InP - DHBT type grown by MBE with a graded composition AlInP emitter
Author :
Zaknoune, M. ; Colder, H. ; Yarekha, D.A. ; Dambrine, G. ; Mollot, F.
Author_Institution :
Inst. d´´Electron., Microelectron. et de Nanotechnol., Villeneuve d´´Ascq
fYear :
2008
fDate :
25-29 May 2008
Firstpage :
1
Lastpage :
3
Abstract :
AlxIn1-XP/GaAs0.51Sb0.49 DHBTs with various aluminum contents have been grown by MBE. This was motivated by the poor current gain of the InP/GaAsSb structure. From x = 0.00 to 0.30 the best result is obtained with x = 0.25 with a current gain around 6 times higher.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; AlInP-GaAsSb; DHBT; MBE growth; current gain enhancement; double heterojunction bipolar transistors; graded composition emitter; Aluminum; Electron traps; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; MOCVD; Molecular beam epitaxial growth; Radiative recombination; Solids; Spontaneous emission; AlInP emitter; DHBT; GaAsSb/InP; MBE;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
ISSN :
1092-8669
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2008.4703041
Filename :
4703041
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1815389
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