DocumentCode
1815395
Title
Development of a high voltage intelligent power module (HVIPM)
Author
Tanaka, T. ; Mizoshiri, T. ; Suekawa, E. ; Umesaki, I. ; Kawaguchi, Y. ; Donlon, John F.
Author_Institution
Power Device Div., Mitsubishi Electr. Corp., Fukuoka, Japan
Volume
2
fYear
2003
fDate
15-19 June 2003
Firstpage
817
Abstract
A high voltage intelligent power module (HVIPM) rated at 600 A, 6.5 kV has been developed using an optimized punch through IGBT chip, coordinated free-wheel diode, high quality manufacturing processes, and high performance gate control technology.
Keywords
insulated gate bipolar transistors; modules; power semiconductor diodes; 6.5 kV; 600 A; coordinated free-wheel diode; high performance gate control technology; high quality manufacturing processes; high voltage intelligent power module; optimized punch through IGBT chip; Bridge circuits; Conductivity; Insulated gate bipolar transistors; Multichip modules; Power system reliability; Semiconductor diodes; Thyristors; Transient analysis; Voltage; Wheels;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialist Conference, 2003. PESC '03. 2003 IEEE 34th Annual
ISSN
0275-9306
Print_ISBN
0-7803-7754-0
Type
conf
DOI
10.1109/PESC.2003.1218162
Filename
1218162
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