DocumentCode
1815420
Title
The use of a formal optimisation procedure in automatic parameter extraction of power semiconductor devices
Author
Bryant, A.T. ; Palmer, P.R. ; Hudgins, J.L. ; Santi, E. ; Kang, X.
Author_Institution
Dept. of Eng., Cambridge Univ., UK
Volume
2
fYear
2003
fDate
15-19 June 2003
Firstpage
822
Abstract
A procedure for automatic parameter extraction is outlined, based on accurate physics-based models of the diode, IGBT and associated circuitry. A formal optimisation method is used to refine initial parameter estimates, and is coupled with a hardware testing system to obtain device waveform measurements.
Keywords
insulated gate bipolar transistors; optimisation; power bipolar transistors; power field effect transistors; semiconductor device models; IGBT; automatic parameter extraction; circuitry; device waveform measurements; diode; formal optimisation procedure; full-bridge converter; hardware testing system; initial parameter estimates refining; physics-based models; power semiconductor devices; waveform evaluation; Circuit testing; Coupling circuits; Hardware; Insulated gate bipolar transistors; Optimization methods; Parameter estimation; Parameter extraction; Power semiconductor devices; Power system modeling; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialist Conference, 2003. PESC '03. 2003 IEEE 34th Annual
ISSN
0275-9306
Print_ISBN
0-7803-7754-0
Type
conf
DOI
10.1109/PESC.2003.1218163
Filename
1218163
Link To Document