Title :
The use of a formal optimisation procedure in automatic parameter extraction of power semiconductor devices
Author :
Bryant, A.T. ; Palmer, P.R. ; Hudgins, J.L. ; Santi, E. ; Kang, X.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
A procedure for automatic parameter extraction is outlined, based on accurate physics-based models of the diode, IGBT and associated circuitry. A formal optimisation method is used to refine initial parameter estimates, and is coupled with a hardware testing system to obtain device waveform measurements.
Keywords :
insulated gate bipolar transistors; optimisation; power bipolar transistors; power field effect transistors; semiconductor device models; IGBT; automatic parameter extraction; circuitry; device waveform measurements; diode; formal optimisation procedure; full-bridge converter; hardware testing system; initial parameter estimates refining; physics-based models; power semiconductor devices; waveform evaluation; Circuit testing; Coupling circuits; Hardware; Insulated gate bipolar transistors; Optimization methods; Parameter estimation; Parameter extraction; Power semiconductor devices; Power system modeling; Semiconductor diodes;
Conference_Titel :
Power Electronics Specialist Conference, 2003. PESC '03. 2003 IEEE 34th Annual
Print_ISBN :
0-7803-7754-0
DOI :
10.1109/PESC.2003.1218163
