DocumentCode
1815424
Title
Can the bridgman dewetted process be applied to InP crystal growth?
Author
Duffar, Thierry
Author_Institution
Simap-EPM, Enseeg, St. Martin d´´Heres
fYear
2008
fDate
25-29 May 2008
Firstpage
1
Lastpage
4
Abstract
The dewetting process, which produces crystals with improved structural quality, is described and the necessary conditions in order to get a stable growth are discussed. Based on the collected thermophysical properties of InP, calculations are made, showing that the process can be applied to the growth of single crystals, but that thechnical difficulties can be expected.
Keywords
III-V semiconductors; crystal defects; crystal growth from melt; indium compounds; semiconductor growth; Bridgman process; InP; dewetting process; semiconductor crystal growth; structural defects; thermophysical properties; Cooling; Crystals; Indium phosphide; Monitoring; Pressure control; Shape control; Solids; Temperature control; Thermal conductivity; Thermal stresses; InP; dewetting; structural defects;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location
Versailles
ISSN
1092-8669
Print_ISBN
978-1-4244-2258-6
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2008.4703042
Filename
4703042
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