Title :
Can the bridgman dewetted process be applied to InP crystal growth?
Author_Institution :
Simap-EPM, Enseeg, St. Martin d´´Heres
Abstract :
The dewetting process, which produces crystals with improved structural quality, is described and the necessary conditions in order to get a stable growth are discussed. Based on the collected thermophysical properties of InP, calculations are made, showing that the process can be applied to the growth of single crystals, but that thechnical difficulties can be expected.
Keywords :
III-V semiconductors; crystal defects; crystal growth from melt; indium compounds; semiconductor growth; Bridgman process; InP; dewetting process; semiconductor crystal growth; structural defects; thermophysical properties; Cooling; Crystals; Indium phosphide; Monitoring; Pressure control; Shape control; Solids; Temperature control; Thermal conductivity; Thermal stresses; InP; dewetting; structural defects;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4703042
