DocumentCode
1815435
Title
Growth and applications of GaSb crystals
Author
Diéguez, E.
Author_Institution
Dept. de Fis. de Mater., Univ. Autonoma de Madrid, Madrid
fYear
2008
fDate
25-29 May 2008
Firstpage
1
Lastpage
4
Abstract
This paper presents a review of growth methods in preparing semiconducting gallium antimonide (GaSb) bulk crystals. Materials´ chemical-physical properties and applications are considered.
Keywords
III-V semiconductors; chemical analysis; crystal growth from melt; gallium compounds; semiconductor growth; thermophotovoltaic cells; Czochralski method; GaSb; chemical composition; semiconducting gallium antimonide bulk crystals; semiconductor growth; thermophotovoltaic cells; vertical Bridgman method; Composite materials; Crystalline materials; Crystals; Energy conversion; Gallium compounds; III-V semiconductor materials; Lattices; Magnetic liquids; Photonic band gap; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location
Versailles
ISSN
1092-8669
Print_ISBN
978-1-4244-2258-6
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2008.4703043
Filename
4703043
Link To Document