DocumentCode :
1815435
Title :
Growth and applications of GaSb crystals
Author :
Diéguez, E.
Author_Institution :
Dept. de Fis. de Mater., Univ. Autonoma de Madrid, Madrid
fYear :
2008
fDate :
25-29 May 2008
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents a review of growth methods in preparing semiconducting gallium antimonide (GaSb) bulk crystals. Materials´ chemical-physical properties and applications are considered.
Keywords :
III-V semiconductors; chemical analysis; crystal growth from melt; gallium compounds; semiconductor growth; thermophotovoltaic cells; Czochralski method; GaSb; chemical composition; semiconducting gallium antimonide bulk crystals; semiconductor growth; thermophotovoltaic cells; vertical Bridgman method; Composite materials; Crystalline materials; Crystals; Energy conversion; Gallium compounds; III-V semiconductor materials; Lattices; Magnetic liquids; Photonic band gap; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
ISSN :
1092-8669
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2008.4703043
Filename :
4703043
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1815435
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