Evidence of RTS noise in emitter-base periphery of InP/GaAsSb/InP HBT

Author

GRANDCHAMP, Brice ; MANEUX, Cristell ; LABAT, Nathalie ; Touboul, André ; SCAVENNEC, André ; Riet, Muriel ; Godin, Jean

Author_Institution

IMS, Univ. Bordeaux 1, Talence

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

This paper presents low frequency noise (LF) measurements on InP/GaAsSb/InP HBTs. The spectral analysis of the dominant base noise source SIb has allowed to identify the 1/f noise and a RTS noise component. From LF noise measurements as a function of the temperature, the parameters of the traps responsible for the RTS noise signature have been extracted. An activation energy close to 200 eV with a capture cross-section near 1times10^-18 cm² have been determined.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; random noise; semiconductor device noise; semiconductor heterojunctions; spectral analysis; 1/f noise; HBT; InP-GaAsSb-InP; RTS noise; activation energy; base noise source; capture cross-section; carrier traps; emitter-base periphery; heterojunction bipolar transistor; low frequency noise; spectral analysis; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Integrated circuit interconnections; Low-frequency noise; Noise measurement; Noise shaping; Temperature; Testing; GaAsSb; HBT; RTS noise; low-frequency noise; temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4703044

Filename

4703044