Title :
Theory of excitonic Rabi flopping and quantum interference in single quantum dots
Author_Institution :
Dept. of Electron. & Inf. Sci., Kyoto Inst. of Technol., Japan
Abstract :
Summary form only given. Semiconductor quantum dots are attracting much interest as a candidate to implement the quantum information processing and the quantum computation. In order to examine the possibility of the quantum state manipulation, we study the excitonic Rabi flopping and a new type of quantum interference phenomena in semiconductor quantum dots. One of the most striking manifestation of the quantum coherence is the Rabi flopping. The observation of the excitonic Rabi splitting in an InGaAs quantum dot was reported recently. Under the strong excitation of an excited exciton state in a single quantum dot, the luminescence from the exciton ground state shows a doublet splitting. This splitting can be interpreted in the dressed exciton picture. Namely, under the strong and resonant excitation of a particular exciton state, the ground state of the system splits into two levels. Then the transition from the exciton ground state to the split ground state results in the doublet structure of the emission spectrum.
Keywords :
III-V semiconductors; excitons; gallium arsenide; indium compounds; photoluminescence; quantum computing; quantum optics; resonant states; semiconductor quantum dots; InGaAs; InGaAs quantum dot; Rabi flopping; coherent superposition; doublet splitting; doublet structure; dressed exciton; emission spectrum; excited exciton state; exciton ground state; excitonic Rabi flopping; excitonic Rabi splitting; ground state; luminescence; quantum Interference; quantum computation; quantum information processing; quantum interference phenomena; quantum state manipulation; semiconductor quantum dots; single quantum dot; single quantum dots; strong resonant excitation; Coherence; Excitons; Indium gallium arsenide; Information processing; Interference; Luminescence; Quantum computing; Quantum dots; Quantum mechanics; Stationary state;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2001. QELS '01. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-663-X
DOI :
10.1109/QELS.2001.961793