Title :
Nano-aperture plasmonic VCSELS
Abstract :
We have successfully investigated the selfassembly mechanism for InAs quantum dots (QDs) formed on GaAs(001) by using a unique scanning tunnelling microscope (STM) placed within the molecular beam epitaxy (MBE) growth chamber. The images elucidate the mechanism of QD nucleation, demonstrating directly that not all deposited In is initially incorporated into the lattice, hence providing a large supply of material to rapidly form QDs via islands containing tens of atoms. kinetic Monte Carlo (kMC) simulations based on firstprinciples calculations show that tiny alloy fluctuations, like atomistic point defects, in the InGaAs wetting layer prior to are crucial in determining nucleation sites.
Keywords :
III-V semiconductors; Monte Carlo methods; gallium arsenide; molecular beam epitaxial growth; nanotechnology; nucleation; plasmonics; point defects; scanning tunnelling microscopy; self-assembly; semiconductor quantum dots; surface emitting lasers; wetting; GaAs; GaAs(001); InAs-GaAs; MBE; STM; atomistic point defects; first principles calculations; fluctuations; kinetic Monte Carlo simulations; molecular beam epitaxy growth; nanoaperture plasmonic VCSELS; nucleation; quantum dots; scanning tunnelling microscopy; selfassembly mechanism; wetting layer; Atomic layer deposition; Kinetic theory; Lattices; Microscopy; Molecular beam epitaxial growth; Monte Carlo methods; Plasmons; Quantum dots; Tunneling; Vertical cavity surface emitting lasers; GaAs; In-situ; InAs; Quantum Dots; molecular beam epixtaxy; scanning tunneling microscope;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4703045
