DocumentCode :
1815512
Title :
Quantum interference due to continuum states in single self-assembled quantum dots
Author :
Toda, Yuichiro ; Takahashi, Masaharu ; Sugimoto, Taku ; Nishioka, Michi ; Ishida, Shigesuke ; Arakawa, Yasuhiko
Author_Institution :
Graduate Sch. of Eng., Hokkaido Univ., Sapporo, Japan
fYear :
2001
fDate :
11-11 May 2001
Firstpage :
20
Lastpage :
21
Abstract :
Summary form only given. The study of quantum mechanical interactions between excited carriers in the semiconductor quantum dots (QDs) provides better understanding of zero-dimensional (0D) systems. One of the remarkable features of QDs is their atomic like density of states (DOS). Recently, we performed single dot spectroscopy on InGaAs self-assembled quantum dots (SAQDs) grown by Stranski-Krastnow mode, and found that their photoluminescence excitation (PLE) spectra exhibit 2D-like continuum states as well as discrete DOS structures. Because SAQDs are connected with 2D wetting layer (WL), it is supposed that the observed continuum originate from a crossover from 0D to 2D nature in their DOS. On the other hand, excited carriers in a single discrete state within a continuum show asymmetric resonance in their optical spectrum. This asymmetry is produced by interference between the optical transitions of a discrete energy state with continuum, the so-called Fano interference. In this paper, we carried out PLE spectroscopy with high excitation power and observed asymmetric resonances due to the existence of continuum states.
Keywords :
III-V semiconductors; excited states; gallium arsenide; indium compounds; photoluminescence; quantum optics; self-assembly; semiconductor quantum dots; 2D-like continuum states; Fano interference; InGaAs; InGaAs self assembled quantum dots; Stranski-Krastnow mode; asymmetric resonance; asymmetric resonances; atomic like density of states; continuum states; discrete energy state; excited carriers; high excitation power; optical spectrum; optical transitions; photoluminescence excitation spectra; quantum mechanical interactions; semiconductor quantum dots; single dot spectroscopy; zero-dimensional systems; Absorption; Autocorrelation; Delay effects; Gallium arsenide; Interference; Phonons; Quantum dots; Quantum mechanics; Self-assembly; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2001. QELS '01. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-663-X
Type :
conf
DOI :
10.1109/QELS.2001.961795
Filename :
961795
Link To Document :
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