Title :
Semiconductor nanowires in InP and related material systems: MBE growth and properties
Author :
Cirlin, G.E. ; Dubrovskii, V.G. ; Harmand, J.C. ; Patriarche, G. ; Glas, F. ; Tchernycheva, M. ; Sartel, C.
Author_Institution :
St.Petersburg Phys. Technol. Centre for Res. & Educ., RAS, St. Petersburg
Abstract :
In this work, we report on the Au-assisted MBE of various InP and related material NWs on InP(111)B substrates. The influence of growth conditions on the InAsP insertion geometry and composition in InP nanowire is evidenced. Ex-situ thermal annealing produces significant changes to the PL spectra of these heterostructures. It is shown that InP/InAsP/InP heterostructures are well suited for fabrication of emitters in the telecommunication wavelength range 1.3-1.55 mum.
Keywords :
III-V semiconductors; annealing; indium compounds; molecular beam epitaxial growth; nanowires; photoluminescence; scanning electron microscopy; semiconductor heterojunctions; semiconductor quantum wires; transmission electron microscopy; Au-assisted MBE growth; InAsP insertion geometry; InP-InAsP-InP; PL spectra; emitters; ex-situ thermal annealing; nanowire composition; semiconductor heterostructure; semiconductor nanowires; telecommunication applications; wavelength 1.3 mum to 1.55 mum; Fabrication; Indium phosphide; Molecular beam epitaxial growth; Nanowires; Photoluminescence; Scanning electron microscopy; Semiconductor materials; Spectroscopy; Substrates; Transmission electron microscopy; InP; molecular beam epitaxy; nanowires; photoluminescence; scanning electron microscopy; transmission electron microscopy;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4703047
