Title :
Monolayer-fluctuation-free interface formation by the cleaved-edge overgrowth method with growth Interruption for uniform quantum wires and wells
Author :
Yoshita, M. ; Akiyama, H. ; Pfeiffer, L.N. ; West, K.W.
Author_Institution :
Inst. for Solid State Phys., Univ. of Tokyo, Chiba, Japan
Abstract :
Summary form only given. The T-shaped quantum wires (T-QWRs) have been successfully fabricated by cleaved-edge overgrowth (CEO) and MBE. They showed unique one-dimensional properties. However, the difficulty of this growth method still lies in growth of high-quality GaAs layer on the [110] cleaved surface, which requires low growth temperature around 480-500/spl deg/C and high As flux. In fact, photoluminescence (PL) linewidths of the [110] quantum wells (QWs) and T-QWRs by CEO have been still broader than that of the conventional [001] QWs. In order to fabricate high-quality T-QWRs, further understanding and improvement of the growth of the GaAs layer on the [110] cleaved edge is required.
Keywords :
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; monolayers; photoluminescence; semiconductor quantum wires; spectral line breadth; 480 to 500 C; GaAs; T-shaped quantum wires; cleaved surface; cleaved-edge overgrowth method; growth interruption; high-quality GaAs layer; low growth temperature; molecular beam epitaxy; monolayer-fluctuation-free interface formation; photoluminescence linewidths; uniform quantum wells; uniform quantum wires; Annealing; Atomic force microscopy; Atomic layer deposition; Gallium arsenide; Rough surfaces; Substrates; Surface morphology; Surface roughness; Temperature; Wires;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2001. QELS '01. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-663-X
DOI :
10.1109/QELS.2001.961796
