Title :
Resonant Stokes and anti-Stokes luminescence of GaAs/AlGaAs quantum dots on a (411)A GaAs surface
Author :
Watatani, C. ; Edamatsu, K. ; Itoh, T. ; Shimomura, S. ; Hiyamizu, S.
Author_Institution :
Div. of Mater. Phys., Osaka Univ., Japan
Abstract :
Summary form only given. Recent studies of semiconductor quantum dots (QDs) using optical micro-probing techniques have revealed many unique and interesting properties of an individual QD.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; photoluminescence; resonant states; semiconductor quantum dots; spectral line breadth; /spl mu/-excitation spectra; /spl mu/-photoluminescence spectra; GaAs; GaAs surface; GaAs-AlGaAs; GaAs/AlGaAs QDs; PL lines; anti-Stokes luminescence; discrete energy levels; excitation spectra; low temperature; optical micro-probing techniques; resonant Stokes luminescence; resonant anti-Stokes luminescence; resonant excitation; semiconductor quantum dots; Luminescence; Quantum dots; Resonance; Semiconductor devices;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2001. QELS '01. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-663-X
DOI :
10.1109/QELS.2001.961798
