Advanced HBT microelectronics at Northrop Grumman Space Technology

Author

Gutierrez-Aitken, A. ; Monier, C. ; Chang, P. ; Scott, D. ; Sato, K. ; Kaneshiro, E. ; Oyama, B. ; Chan, B. ; Kunkee, E. ; Loi, K. ; Sawdai, D. ; Cavus, A. ; Oki, A.

Author_Institution

Northrop Grumman Space Technol., Redondo Beach, CA

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

5

Abstract

Northrop Grumman space technology (NGST) is developing advanced InP-based HBT microelectronics for next generation high performance aerospace, defense and commercial applications. In this paper we describe these production and advanced technologies including a 0.25 um InP HBT. We present device description, performance, and circuit demonstrations for these technologies.

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; semiconductor device models; InP; Northrop Grumman space technology; circuit demonstration; heterojunction bipolar transistor; microelectronics; Chemical technology; Circuits; DH-HEMTs; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Microelectronics; Signal to noise ratio; Space technology; HBTs; III–V semiconductors; InP; high-speed microelectronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4703049

Filename

4703049