Temperature measurement in Al films during electromigration test

Author

Jin, Hong ; Gao, Guang-bo

Author_Institution

Dept. of Radio-Electron., Beijing Polytech. Univ., China

fYear

1988

fDate

11-13 May 1988

Firstpage

29

Lastpage

31

Abstract

A novel measurement structure and method is presented by which one can measure the temperature of Al thin films during electromigration testing with high precision, better than previously attainable. At ambient temperature of 27°C, experimental results show that the temperature and resistance variations of Al films can be considered as three stages. The first stage is the increasing process of the temperature and resistance of Al films (T_Al and R_Al) due to Joule heating. The second stage is an electromigration process in which the T_Al and R _Al varied very slowly. The last is the catastrophic failure process in which the T_Al and R_Al increase rapidly until open circuit failure

Keywords

aluminium; electromigration; integrated circuit testing; metallic thin films; metallisation; temperature measurement; Al thin films; IC metallisation; IC testing; Joule heating; catastrophic failure process; electromigration test; measurement structure; temperature measurement; Current density; Electrical resistance measurement; Electromigration; Metallization; Resistance heating; Resistors; Temperature measurement; Testing; Thermal resistance; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal Phenomena in the Fabrication and Operation of Electronic Components: I-THERM '88, InterSociety Conference on

Conference_Location

Los Angeles, CA

Type

conf

DOI

10.1109/ITHERM.1988.28672

Filename

28672