Heterogeneous integration of III–V optoelectronic devices on silicon

Author

Van Thourhout, Dries ; Roelkens, Günther ; Brouckaert, Joost ; Komorowska, Katarzyna ; Liu, Liu ; Baets, Roel ; Nötzel, Richard

Author_Institution

Dept. of Inf. Technol., Ghent Univ., Ghent

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

2

Abstract

Silicon has been proven to be an excellent platform for photonics. However, active functionality and in particular light generation directly from silicon remains difficult. Therefore we developed a die-to-wafer bonding based approach for integrating III-V materials directly on silicon in a cost-effective way, which does not compromise the quality of the materials. In this paper we will illustrate the integration technology developed and several devices fabricated.

Keywords

III-V semiconductors; elemental semiconductors; indium compounds; integrated optoelectronics; microassembling; semiconductor devices; silicon; III-V optoelectronic devices; InP-Si; active functionality; device fabrication; die-wafer bonding; heterogeneous integration technology; light generation; photonics; silicon; Etching; III-V semiconductor materials; Optical device fabrication; Optical materials; Optical waveguides; Optoelectronic devices; Silicon; Substrates; Wafer bonding; Waveguide lasers; Silicon nanophotonics; detectors; heterogeneous integration; lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4703054

Filename

4703054