Title :
Heterogeneous integration of III–V optoelectronic devices on silicon
Author :
Van Thourhout, Dries ; Roelkens, Günther ; Brouckaert, Joost ; Komorowska, Katarzyna ; Liu, Liu ; Baets, Roel ; Nötzel, Richard
Author_Institution :
Dept. of Inf. Technol., Ghent Univ., Ghent
Abstract :
Silicon has been proven to be an excellent platform for photonics. However, active functionality and in particular light generation directly from silicon remains difficult. Therefore we developed a die-to-wafer bonding based approach for integrating III-V materials directly on silicon in a cost-effective way, which does not compromise the quality of the materials. In this paper we will illustrate the integration technology developed and several devices fabricated.
Keywords :
III-V semiconductors; elemental semiconductors; indium compounds; integrated optoelectronics; microassembling; semiconductor devices; silicon; III-V optoelectronic devices; InP-Si; active functionality; device fabrication; die-wafer bonding; heterogeneous integration technology; light generation; photonics; silicon; Etching; III-V semiconductor materials; Optical device fabrication; Optical materials; Optical waveguides; Optoelectronic devices; Silicon; Substrates; Wafer bonding; Waveguide lasers; Silicon nanophotonics; detectors; heterogeneous integration; lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4703054
