Fabrication of InP HEMT devices with extremely high Fmax

Author

Lai, R. ; Deal, W.R. ; Mei, X.B. ; Yoshida, W. ; Lee, J. ; Dang, L. ; Wang, J. ; Kim, Y.M. ; Liu, P.H. ; Radisic, V. ; Lange, M. ; Gaier, T. ; Samoska, L. ; Fung, A.

Author_Institution

Northrop Grumman Space Technol., Redondo Beach, CA

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

3

Abstract

In this paper, we present the latest advancements of short gate length InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) devices that have achieved extremely high extrapolated Fmax above 1 THz. The high Fmax is validated through the first demonstrations of sub-MMW MMICs (s-MMICs) based on these devices including the highest fundamental transistor oscillator MMIC at 347 GHz and the highest gain greater than 15 dB (greater than 5 dB per stage) at 340 GHz.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; HEMT devices; InGaAs-InAlAs-InP; frequency 340 GHz; frequency 347 GHz; high maximum oscillation frequencies; short gate length high electron mobility transistor; subMMW MMICs; transistor oscillator MMIC; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MMICs; MODFETs; Oscillators; Submillimeter wave integrated circuits; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4703057

Filename

4703057