DocumentCode :
1815875
Title :
Preparation of thiol-terminated monolayers on silicon(100) surfaces using thioacetyl-protected alkynethiol
Author :
Ng, Cheuk Chi Albert ; Saux, Guillaume Le ; Chockalingam, Muthukumar ; Ciampi, Simone ; Harper, Jason B. ; Gooding, J. Justin
fYear :
2010
fDate :
22-26 Feb. 2010
Firstpage :
244
Lastpage :
247
Abstract :
The attachment of acetyl-protected alkynethiol groups onto silicon(100) surfaces was achieved using a hydrosilylation methodology. Subsequent deprotection of the thiols using either hydrochloric acid or ammonia solution was investigated using X-ray photoelectron spectroscopy (XPS), and compared with similar reaction in solution. It was found that ammonia solution was more efficient than hydrochloric acid for the deprotection step. However, the deprotection was much less efficient on the surface than in solution.
Keywords :
X-ray photoelectron spectra; crystal growth from solution; monolayers; organic compounds; Si; X-ray photoelectron spectroscopy; XPS; ammonia solution; hydrochloric acid; hydrosilylation methodology; silicon (100) surfaces; thioacetyl-protected alkynethiol; thiol-terminated monolayers; Australia; Carbon; Energy resolution; Nitrogen; Silicon; Surface treatment; hydrosilylation; protection group; self-assembled monolayer; silicon; thiol;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoscience and Nanotechnology (ICONN), 2010 International Conference on
Conference_Location :
Sydney, NSW
Print_ISBN :
978-1-4244-5261-3
Electronic_ISBN :
978-1-4244-5262-0
Type :
conf
DOI :
10.1109/ICONN.2010.6045195
Filename :
6045195
Link To Document :
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