DocumentCode
1815996
Title
Silicon carbide MESFETs for high-power S-band applications
Author
Allen, S.T. ; Sadler, R.A. ; Alcom, T.S. ; Palmour, J.W. ; Carter, C.H., Jr.
Author_Institution
Cree Research Inc., Durham, NC, USA
Volume
1
fYear
1997
fDate
8-13 June 1997
Firstpage
57
Abstract
Silicon carbide MESFETs with 0.7 /spl mu/m gates and 18 mm of total periphery had a P/sub 1db/ of 15 watts CW at 2.1 GHz with a power-added efficiency of 54%. These FETs were optimized for S-band power and had an f/sub T/ of 8.5 GHz and an f/sub max/ of 25 GHz. Similar devices with 0.45 /spl mu/m gate lengths had an f/sub T/ of 22 GHz and an f/sub max/ as high as 50 GHz, demonstrating the potential of this technology to extend to much higher frequencies.
Keywords
UHF field effect transistors; microwave field effect transistors; microwave power transistors; power MESFET; power field effect transistors; silicon compounds; wide band gap semiconductors; 0.45 micron; 0.7 micron; 2.1 to 50 GHz; 54 percent; MESFETs; SiC; high-power S-band applications; Breakdown voltage; Electric breakdown; Electrons; Gallium arsenide; MESFETs; Microwave devices; Photonic band gap; Silicon carbide; Thermal conductivity; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location
Denver, CO, USA
ISSN
0149-645X
Print_ISBN
0-7803-3814-6
Type
conf
DOI
10.1109/MWSYM.1997.604520
Filename
604520
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