Title :
High-speed directly and indirectly modulated VCSELs
Author :
Hopfer, F. ; Mutig, A. ; Strittmatter, A. ; Fiol, G. ; Moser, P. ; Bimberg, D. ; Shchukina, V.A. ; Ledentsova, N.N. ; Lott, J.A. ; Quast, H. ; Kuntz, M. ; Mikhrin, S.S. ; Krestnikov, I.L. ; Livshits, D.A. ; Kovsh, A.R. ; Bornholdt, C.
Author_Institution :
Inst. fuer Festkoerperphys., Tech. Univ. Berlin, Berlin
Abstract :
Recent results on directly modulated VCSELs, including high efficiency 980 nm devices operating error free at 20 Gbit/s without current adjustment between 25 and 85degC, will be reviewed. In addition, a novel electro-optically modulated (EOM) VCSEL concept employing an EOM Bragg reflector based on the Quantum Confined Stark Effect will be proposed and preliminary data presented.
Keywords :
electro-optical modulation; high-speed optical techniques; laser cavity resonators; optical communication equipment; optical fibre communication; quantum confined Stark effect; surface emitting lasers; Bragg reflector; directly modulated VCSEL; electro-optically modulated VCSEL; quantum confined Stark effect; temperature 25 degC to 85 degC; wavelength 980 nm; Apertures; Distributed Bragg reflectors; Electrooptic modulators; Gallium arsenide; LAN interconnection; Lasers and electrooptics; Optical modulation; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; Semiconductor laser; VCSEL; electrooptic modulation; high-speed modulation; surface emitting laser;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4703064
